Engineering the metal gate electrode for controlling the threshold voltage of organic transistors

被引：28

作者：

Chung, Yoonyoung ^{[1
]}

Johnson, Olasupo ^{[2
]}

Deal, Michael ^{[1
]}

Nishi, Yoshio ^{[1
]}

Murmann, Boris ^{[1
]}

Bao, Zhenan ^{[2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

关键词：

SELF-ASSEMBLED MONOLAYERS; DENSITY; SHIFT;

D O I：

10.1063/1.4739511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage (V-TH) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the VTH is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C-60 n-channel OFETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739511]

引用

页数：4

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