Trap-Assisted Tunneling in Deep-Submicron Ge PFET Junctions

被引：15

作者：

Eneman, G. ^{[1
]}

Gonzalez, M. Bargallo ^{[1
]}

Hellings, G. ^{[1
]}

De Jaeger, B. ^{[1
]}

Wang, G. ^{[1
]}

Mitard, J. ^{[1
]}

De Meyer, K. ^{[1
]}

Claeys, C. ^{[1
]}

Meuris, M. ^{[1
]}

Heyns, M. M. ^{[1
]}

Hoffmann, T. Y. ^{[1
]}

Simoen, E. ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 2 | 2010年 / 28卷 / 05期

关键词：

CARRIER LIFETIME DEPENDENCE; LEAKAGE CURRENT; ELECTRIC-FIELD; GERMANIUM; PERFORMANCE; SILICON; TEMPERATURE; PMOSFETS; EMISSION; MOSFETS;

D O I：

10.1149/1.3367946

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work investigates Trap-Assisted Tunneling (TAT) leakage in 80nm-deep Ge p+/n junctions used for short-channel pFET fabrication. The parameters in the available TAT models are adapted to obtain better agreement with the experimental results. It will be shown that one set of parameters can describe a wide range of counter-doping profiles, over the reverse voltage range between 0 and 1V. Moreover, except for a reduction of the Shockley-Read-Hall lifetime, these parameters also give an accurate description for Ge epitaxial layers with increased threading dislocation density. Possible reasons are given for the strong voltage dependence of the junction leakage and the resulting low TAT-mass needed: the presence of threading dislocations may lead to enhanced tunneling, furthermore the validity of the original TAT models in these shallow junctions can be questioned. Further actions are suggested to get a better insight into the physical significance of the parameters.

引用

页码：143 / 152

页数：10

共 28 条

[1]

[Anonymous], 2007, TAUR MED US GUID

[2]

[Anonymous], 2006, SEN PROC REF MAN, P441

[3]

[Anonymous], P DEV RES C

[4]

Batail E, 2008, INT EL DEVICES MEET, P397

[5]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[6] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].

CHYNOWETH, AG ;

FELDMANN, WL ;

LEE, CA ;

LOGAN, RA ;

PEARSON, GL ;

AIGRAIN, P .

PHYSICAL REVIEW, 1960, 118 (02) :425-434

[7] Analysis of junction leakage in advanced germanium p plus /n junctions [J].

Eneman, G. ;

Casain, O. Sicart i ;

Simoen, E. ;

Brunco, D. P. ;

De Jaeger, B. ;

Satta, A. ;

Nicholas, G. ;

Claeys, C. ;

Meuris, M. ;

Heyns, M. M. .

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, :454-+

[8] P plus /n junction leakage in thin selectively grown Ge-in-STI substrates [J].

Eneman, G. ;

Yang, R. ;

Wang, G. ;

De Jaeger, B. ;

Loo, R. ;

Claeys, C. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. M. ;

Simoen, E. .

THIN SOLID FILMS, 2010, 518 (09) :2489-2492

[9] Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions [J].

Eneman, Geert ;

Wiot, Maxime ;

Brugere, Antoine ;

Sicart I Casain, O. Oriol ;

Sonde, Sushant ;

Brunco, David P. ;

De Jaeger, Brice ;

Satta, Alessandra ;

Hellings, Geert ;

De Meyer, Kristin ;

Claeys, Cor ;

Meuris, Marc ;

Heyns, Marc M. ;

Simoen, Eddy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) :2287-2296

[10] Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology [J].

Eneman, Geert ;

De Jaeger, Brice ;

Simoen, Eddy ;

Brunco, David P. ;

Hellings, Geert ;

Mitard, Jerome ;

De Meyer, Kristin ;

Meuris, Marc ;

Heyns, Marc M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (12) :3115-3122

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