Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

被引：80

作者：

Hiramatsu, Hidenori ^{[1
]}

Katase, Takayoshi ^{[2
]}

Kamiya, Toshio ^{[1
,2
]}

Hirano, Masahiro ^{[1
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Japan Sci & Technol Agcy JST, Frontier Res Ctr, ERATO SORST,Modori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

关键词：

D O I：

10.1063/1.2996591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial thin films of LaFeAsO were fabricated on MgO(001) and mixed-perovskite (La,Sr)(Al,Ta)O-3(001) single-crystal substrates by pulsed laser deposition using a Nd-doped yttrium aluminum garnet second harmonic source and a 10 at. % F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at similar to 0.2 eV, which is explained by ab initio calculations. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2996591]

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