MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

被引:60
作者
Choi, CH [1 ]
Goo, JS
Oh, TY
Yu, ZP
Dutton, RW
Bayoumi, A
Cao, M
Vande Voorde, P
Vook, D
Diaz, CH
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] HP Co, HP Lab, ULSI Lab, Palo Alto, CA 94303 USA
[3] Taiwan Semicond Mfg Co, Hsinchu, Taiwan
基金
美国国家科学基金会;
关键词
device simulation; MOS C-V modeling; quantum mechanical corrections; SPICE; ultrathin gate oxide;
D O I
10.1109/55.767102
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An equivalent circuit approach to MOS capacitance-voltage (C-V) modeling of ultrathin gate oxides (1.3-1.8 nm) is proposed, Capacitance simulation including polysilicon depletion is based on quantum mechanical (QM) corrections implemented in a two-dimensional (2-D) device simulator; tunneling current is calculated using a one-dimensional (1-D) Green's function solver, The sharp decrease in capacitance observed for gate oxides below 2.0 nm in both accumulation and inversion is modeled using distributed voltage-controlled RC networks. The imaginary components of small-signal input admittance obtained from AC network analysis agree well with measured capacitance.
引用
收藏
页码:292 / 294
页数:3
相关论文
共 6 条
  • [1] Physical oxide thickness extraction and verification using quantum mechanical simulation
    Bowen, C
    Fernando, CL
    Klimeck, G
    Chatterjee, A
    Blanks, D
    Lake, R
    Hu, J
    Davis, J
    Kulkarni, M
    Hattangady, S
    Chen, IC
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 869 - 872
  • [2] MECHANISM OF LEAKAGE CURRENT THROUGH THE NANOSCALE SIO2 LAYER
    NAGANO, S
    TSUKIJI, M
    ANDO, K
    HASEGAWA, E
    ISHITANI, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3530 - 3535
  • [3] CMOS scaling into the nanometer regime
    Taur, Y
    Buchanan, DA
    Chen, W
    Frank, DJ
    Ismail, KE
    Lo, SH
    SaiHalasz, GA
    Viswanathan, RG
    Wann, HJC
    Wind, SJ
    Wong, HS
    [J]. PROCEEDINGS OF THE IEEE, 1997, 85 (04) : 486 - 504
  • [4] Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs
    VandeVoorde, P
    Griffin, PB
    Yu, Z
    Oh, SY
    Dutton, RW
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 811 - 814
  • [5] A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS
    VANDORT, MJ
    WOERLEE, PH
    WALKER, AJ
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (03) : 411 - 414
  • [6] YU Z, COMMUNICATION