B-site doping effect on ferroelectric property of bismuth titanate ceramic -: art. no. 114104

被引：31

作者：

Li, W ^{[1
]}

Gu, J ^{[1
]}

Song, CH ^{[1
]}

Su, D ^{[1
]}

Zhu, JS ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2134877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is well known that doping can greatly affect the ferroelectric properties of Bi4Ti3O12: however, the mechanisms of the doping effect, especially doping at the B site, are not well understood. The effect of B-site doping with different ion sizes and valences on the remanent polarization and fatigue endurance was investigated to clarify the mechanism of B-site doping. The experimental results indicated that both the radius of doping ion and the concentration of oxygen vacancies have no certain relation with the enhancement of remanent polarization. However, oxygen vacancies play an important role in fatigue endurance in doped Bi4Ti3O12. The effect of B-site doping is briefly discussed.

引用

页数：4

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