Integration Trends in Monolithic Power ICs: Application and Technology Challenges

被引：16
作者：
Rose, Matthias [1 ]
Bergveld, Henk Jan [1 ]
机构：
[1] NXP Semicond, Technol & Operat, AMS IP, Power Management, NL-5656 AE Eindhoven, Netherlands
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2016年 / 51卷 / 09期
关键词：
BCD technology; CMOS technology; DC/DC converter; ESD protection; high-voltage devices; integrated passives; interfaces; monolithic integration; power management; SILICON-CONTROLLED RECTIFIER; DC-DC CONVERTER; SWITCHED-CAPACITOR; VOLTAGE REGULATOR; BCD TECHNOLOGY; MIM CAPACITOR; 6; V; SOI; DESIGN; 0.35-MU-M;
D O I：
10.1109/JSSC.2016.2566612
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper highlights the general trend towards further monolithic integration in power applications by enabling power management and interfacing solutions in advanced CMOS nodes. The need to combine high-density digital circuits, power-management circuits, and robust interfaces in a single technology platform requires the development of additional process options on top of baseline CMOS. Examples include high-voltage devices, devices to enable area-efficient ESD protection, and integrated capacitors and inductors with high quality factors. The use of bipolar devices in these technologies for protection and control purposes in power applications is also addressed.
引用
收藏
页码：1965 / 1974
页数：10
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