First-Principles Investigation of Half-metallic Ferromagnetism in V-doped BeS, BeSe, and BeTe

被引:45
作者
Doumi, B. [1 ]
Tadjer, A. [1 ]
Dahmane, F. [1 ]
Djedid, A. [1 ]
Yakoubi, A. [1 ]
Barkat, Y. [2 ]
Kada, M. Ould [3 ]
Sayede, A. [4 ]
Hamada, L. [5 ]
机构
[1] Djillali Liabes Univ Sidi Bel Abbes, Dept Phys, Modelling & Simulat Mat Sci Lab, Sidi Bel Abbes 22000, Algeria
[2] Univ Djillali Liabes Sidi Bel Abbes, Dept Phys, Lab Mat Magnet, Sidi Bel Abbes 22000, Algeria
[3] Univ Mascara, LPQ3M, Mascara 29000, Algeria
[4] Univ Artois, Fac Sci, UMR CNRS 8181, UCCS, F-62307 Lens, France
[5] Univ Dr Moulay Tahar Saida, Lab Etud Physicochim, Saida 20000, Algeria
关键词
Spintronics; Half-metallic ferromagnetism; Double-exchange mechanism; Vanadium doped II-VI chalcogenides; GROUND-STATE PROPERTIES; MAGNETIC-PROPERTIES; BERYLLIUM CHALCOGENIDES; OPTICAL-PROPERTIES; AB-INITIO; ELECTRONIC-STRUCTURE; PHASE-TRANSFORMATION; MATERIAL DESIGN; II-VI; SEMICONDUCTORS;
D O I
10.1007/s10948-013-2401-3
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the electronic structure and half-metallic ferromagnetism in zinc blende phase of Be1-x V (x) M (M=S, Se, Te) at concentration x=0.125 by employing a first-principles calculations within the framework of density functional theory (DFT) based on the linearized augmented plane wave method (FP-LAPW), as implanted in the WIEN2k code with generalized gradient approximation functional proposed by Wu and Cohen (WC-GGA). The electronic properties exhibit half-metallic behavior. So the density of states shows the hybridization between the p (S, Se, Te) and 3d (V) states that creates the antibonding states in the gap, which stabilizes the ferromagnetic ground state associated with the double-exchange mechanism, whereas the spin polarized band structures depict half-metallic gap that increases from Be0.875V0.125S to Be0.875V0.125Se to Be0.875V0.125Te. These compounds are robust half-metallic ferromagnets with spin polarization of 100 % and predicted to be potential candidates for spin injection applications in spintronic devices. Therefore, our predictions require an experimental confirmation in the future.
引用
收藏
页码:293 / 300
页数:8
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