Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources

被引：108

作者：

Weatherup, Robert S. ^{[1
]}

Baehtz, Carsten ^{[2
]}

Dlubak, Bruno ^{[1
]}

Bayer, Bernhard C. ^{[1
]}

Kidambi, Piran R. ^{[1
]}

Blume, Raoul ^{[3
]}

Schloegl, Robert ^{[4
]}

Hofmann, Stephan ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[2] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[3] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

[4] Fritz Haber Inst, D-14195 Berlin, Germany

来源：

NANO LETTERS | 2013年 / 13卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

Graphene; solid carbon; low temperature; diffusion barrier; in situ; XPS; XRD; LAYER GRAPHENE; NICKEL; DEPOSITION; CATALYSTS;

D O I：

10.1021/nl401601x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform nnonolayer graphene at 600 degrees C with domain sizes exceeding 50 mu m and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

引用

页码：4624 / 4631

页数：8

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