Time-resolved photoluminescence of silicon microstructures fabricated by femtosecond laser in air

被引：13

作者：

Chen, Zhandong ^{[1
,2
]}

Wu, Qiang ^{[1
,2
]}

Yang, Ming ^{[1
,2
]}

Yao, Jianghong ^{[1
,2
]}

Rupp, Romano A. ^{[1
,2
,3
]}

Cao, Yaan ^{[1
,2
]}

Xu, Jingjun ^{[1
,2
]}

机构：

[1] Nankai Univ, MOE Key Lab Weak Light Nonlinear Photon, TEDA Appl Phys Sch, Tianjin 300457, Peoples R China

[2] Nankai Univ, Sch Phys, Tianjin 300457, Peoples R China

[3] Univ Vienna, Fac Phys, A-1090 Vienna, Austria

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 18期

基金：

中国国家自然科学基金;

关键词：

POROUS SILICON; QUANTUM DOTS; VISIBLE PHOTOLUMINESCENCE; RECOMBINATION DYNAMICS; LUMINESCENCE; NANOCRYSTALS; SPECTROSCOPY; TEMPERATURE; IRRADIATION; DEPOSITION;

D O I：

10.1364/OE.21.021329

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Green photoluminescence (PL) from silicon microstructures fabricated by femtosecond laser in air was studied at different temperature by time-resolved spectroscopy. The PL decay profiles are well fitted by a stretched exponential function: I(t) = I(0)* exp[-(t / tau)(beta)]. The dependence of the decay time constant t and of the stretching index beta on PL photon energy and on the temperature is investigated. A model of transport and recombination of the carriers is introduced as a possible explanation of the stretched exponential decay. The nonradiative recombination rate of the localized carriers, which is dependent on the carrier density and influenced by the trapping site density and the temperature, is deduced to be responsible for this kind of decay. (C)2013 Optical Society of America

引用

页码：21329 / 21336

页数：8

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