High responsitivity near infrared Ge photodetectors integrated on Si

被引：23

作者：

Masini, G

Colace, L

Assanto, G

Luan, HC

Wada, K

Kimerling, LC

机构：

[1] Terza Univ Rome, Dept Elect Engn, I-00146 Rome, Italy

[2] Terza Univ Rome, Natl Inst Phys Matter, I-00146 Rome, Italy

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 17期

关键词：

D O I：

10.1049/el:19991010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated and tested heterojunction Ge/Si photodetectors based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD process followed by cyclic thermal annealing. The detectors exhibit responsivities as high as 550mA/W at 1.32 mu m and 250mA/W at 1.55 mu m and response limes shorter than 850ps.

引用

页码：1467 / 1468

页数：2

共 5 条

[1] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si [J].