Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

被引：24

作者：

Galeckas, A ^{[1
]}

Linnros, J

Frischholz, M

Rottner, K

Nordell, N

Karlsson, S

Grivickas, V

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

[2] Vilnius State Univ, Inst Mat Res & Appl Sci, LT-2054 Vilnius, Lithuania

[3] Ind Microelect Ctr, S-72178 Vasteras, Sweden

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC epilayers; carrier lifetime; surface recombination;

D O I：

10.1016/S0921-5107(98)00510-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A spatially and time-resolved free carrier absorption method is applied to quantify surface recombination losses as compared to the bulk in 4H- and 6H-SiC structures. The observed carrier lifetime variation is discussed in terms of crystalline quality, top-surface properties and junction effects at the epilayer-substrate interface. Surface recombination parameters in epilayers with differently processed surfaces are extracted from fitting experimental data with numerical simulations. The as-grown bare epilayer is characterized by 10(4) cm s(-1) surface recombination velocity. Mechanical polishing increases this parameter to 5 x 10(5) cm s(-1). No noticeable passivation of GH-SIC surface by an oxide film is observed, whereas an increase of the surface recombination velocity up to 105 cm s(-1) has been detected after dry oxidation of 4H-SiC. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：239 / 243

页数：5

共 8 条

[1] MEASURING AND MODELING MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON [J].

DELALAMO, J ;

SWIRHUN, S ;

SWANSON, RM .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :47-54

[2] Auger recombination in 4H-SiC: Unusual temperature behavior [J].

Galeckas, A ;

Linnros, J ;

Grivickas, V ;

Lindefelt, U ;

Hallin, C .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3269-3271

[3]

GLAECKAS A, 1998, P INT C PHYS SEM ICP, V177

[4]

Grivickas V., 1997, P INT C SIL CARB 3 N, P529

[5]

KORDINA O, 1996, APPL PHYS LETT, V69, P697

[6]

Larkin D.J., 1994, I PHYS CONFSER, V137, P51

[7]

SCHAFFER WJ, 1994, MATER RES SOC SYMP P, V339, P595, DOI 10.1557/PROC-339-595

[8]

ZHOU W, 1997, P INT C SIL CARB 3 N, P525

← 1 →