Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

被引：41

作者：

Mooney, P. M. ^{[1
]}

Watkins, K. P. ^{[1
]}

Jiang, Zenan ^{[1
,3
]}

Basile, A. F. ^{[1
]}

Lewis, R. B. ^{[2
,4
]}

Bahrami-Yekta, V. ^{[2
]}

Masnadi-Shirazi, M. ^{[2
,3
]}

Beaton, D. A. ^{[2
,4
]}

Tiedje, T. ^{[2
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8P 5C2, Canada

[3] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada

[4] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 13期

关键词：

ELECTRON TRAPS; ALLOY;

D O I：

10.1063/1.4798237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level defects in n-type GaAs1-xBix having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 degrees C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving AsGa, as expected for MBE growth at these temperatures. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798237]

引用

页数：6

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