Bismuth thin films obtained by Pulsed Laser Deposition

被引：3

作者：

Flores, T ^{[1
]}

Arronte, M ^{[1
]}

Rodriguez, E ^{[1
]}

Ponce, L ^{[1
]}

Alonso, JC ^{[1
]}

García, C ^{[1
]}

Fernández, M ^{[1
]}

Haro, E ^{[1
]}

机构：

[1] Univ La Habana, IMRE, Vedado 10400, C Habana, Thailand

来源：

3RD IBEROAMERICAN OPTICS MEETING AND 6TH LATIN AMERICAN MEETING ON OPTICS, LASERS, AND THEIR APPLICATIONS | 1999年 / 3572卷

关键词：

D O I：

10.1117/12.358343

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In the present work Bi thin films were obtained by Pulsed Laser Deposition (PLD), using Nd:YAG laser. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

引用

页码：70 / 73

页数：4

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