Time-dependent universal conductance fluctuations in IrO2 nanowires

被引:1
作者
Lin, Yong-Han [1 ]
Wang, Lu-Yao [2 ]
Lin, Juhn-Jong [1 ,3 ]
机构
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan
[2] Fu Jen Catholic Univ, Dept Phys, Hsinchuang 24205, Taiwan
[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
来源
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
关键词
Quantum-interference effect; Universal conductance fluctuation; Mobile defect; Iridium dioxide nanowire; Rutile structure; INVERSION-LAYERS; METAL; MAGNETORESISTANCE; TEMPERATURE; COHERENCE;
D O I
10.1186/1556-276X-7-673
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.1 e (2) / h at 1.7 K. We ascribe these conductance fluctuations to originating from the conduction electrons scattering upon mobile defects (moving scattering centers). Our measured TUCF characteristics are satisfactorily explained in terms of the existing TUCF theory in its three-dimensional form. The extracted electron dephasing length L (phi) (1.7 K) a parts per thousand integral 90 nm is smaller than the diameter (a parts per thousand 180 nm) of our nanowires.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 32 条
[1]  
Akkermans E., 2007, MESOSCOPIC PHYS ELEC
[2]   Universal conductance fluctuations and localization effects in InN nanowires connected in parallel [J].
Alagha, S. ;
Hernandez, S. Estavez ;
Bloemers, C. ;
Stoica, T. ;
Calarco, R. ;
Schaepers, Th. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
[3]  
Altshuler B., 1987, SOV SCI REV A, V9, P223
[4]  
ALTSHULER BL, 1985, JETP LETT+, V41, P648
[5]  
ALTSHULER BL, 1985, JETP LETT+, V42, P359
[6]  
ALTSHULER BL, 1991, MESOSCOPIC PHENOMENA
[7]   RESISTANCE FLUCTUATIONS IN THIN BI WIRES AND FILMS [J].
BEUTLER, DE ;
MEISENHEIMER, TL ;
GIORDANO, N .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1240-1243
[8]   Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K [J].
Chiu, Shao-Pin ;
Chung, Hui-Fang ;
Lin, Yong-Han ;
Kai, Ji-Jung ;
Chen, Fu-Rong ;
Lin, Juhn-Jong .
NANOTECHNOLOGY, 2009, 20 (10)
[9]  
FENG S, 1986, PHYS REV LETT, V56, P2772, DOI 10.1103/PhysRevLett.56.2772.2
[10]  
Giordano N, 1991, MESOSCOPIC PHENOMENA, P131