Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

被引：11
|
作者：
Zhang, ZB
Lu, J
Chen, QS [1 ]
Prasad, V
机构：
[1] Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China
[2] Florida Int Univ, Dept Mech & Mat Engn, Miami, FL 33174 USA
来源：
ACTA MECHANICA SINICA | 2006年 / 22卷 / 01期
基金：
中国国家自然科学基金;
关键词：
silicon carbide; physical vapor transport; thermal stress; thermoelastic; thermal expansion match;
D O I：
10.1007/s10409-005-0090-2
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
引用
收藏
页码：40 / 45
页数：6
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