Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate

被引：32

作者：

Park, Jin-Hong ^{[1
]}

Tada, Munehiro ^{[1
,3
]}

Kapur, Pawan ^{[1
]}

Peng, Hailin ^{[2
]}

Saraswat, Krishna C. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci Engn, Stanford, CA 94305 USA

[3] NEC Corp Ltd, Device Platforms Res Labs, Kanagawa, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 06期

关键词：

D O I：

10.1063/1.2978367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we have investigated Ni- or Au-induced crystallization and the lateral crystallization of planar amorphous germanium (alpha-Ge) on silicon dioxide at 360 degrees C without the deleterious effects of thermally induced self-nucleation. Subsequently, single crystalline Ge growth has been achieved on SiO(2) by making dimension of alpha-Ge line to be smaller than the size of grains formed using Ni- and Au-induced lateral crystallizations at 360 degrees C. This method can be used to form the channel region of the MOS devices in upper layers of the three-dimensional integrated circuits at low temperatures. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2978367]

引用

页数：6

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