Quantum spin Hall effect induced by electric field in silicene

被引：60
|
作者：
An, Xing-Tao [1 ,2 ]
Zhang, Yan-Yang [2 ,3 ]
Liu, Jian-Jun [4 ]
Li, Shu-Shen [2 ]
机构：
[1] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[3] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[4] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期
基金：
中国国家自然科学基金;
关键词：
TOPOLOGICAL PHASE-TRANSITION;
D O I：
10.1063/1.4790147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790147]
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页数：4
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