Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes

被引:10
作者
Dinh, Duc V. [1 ]
Corbett, Brian [1 ]
Parbrook, Peter J. [1 ,2 ]
Koslow, Ingrid. L. [3 ]
Rychetsky, Monir [3 ]
Guttmann, Martin [3 ]
Wernicke, Tim [3 ]
Kneissl, Michael [3 ]
Mounir, Christian [4 ]
Schwarz, Ulrich [5 ]
Glaab, Johannes [6 ]
Netzel, Carsten [6 ]
Brunner, Frank [6 ]
Weyers, Markus [6 ]
机构
[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Coll Cork, Sch Engn, Cork, Ireland
[3] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany
[4] Univ Freiburg, Inst Mikrosyst Tech, Georges Kohler Allee 103, D-79110 Freiburg, Germany
[5] Tech Univ Chemnitz, Inst Phys, Reichenhainer Str 70, D-09126 Chemnitz, Germany
[6] Leibniz Insitut Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
基金
欧盟第七框架计划;
关键词
BULK GAN; EFFICIENCY DROOP; EMISSION; GREEN; POWER; BLUE; POLARIZATION; TEMPERATURE; ABSORPTION; TEMPLATES;
D O I
10.1063/1.4963757
中图分类号
O59 [应用物理学];
学科分类号
摘要
We compare the optical properties and device performance of unpackaged InGaN/GaN multiplequantum- well light-emitting diodes (LEDs) emitting at similar to 430 nm grown simultaneously on a highcost small-size bulk semipolar (11 (2) over bar2) GaN substrate (Bulk-GaN) and a low-cost large-size (11 (2) over bar2) GaN template created on patterned (10 (1) over bar2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of similar to 10(5) cm(-2) -10(6) cm(-2) and basal-plane stacking fault (BSF) density of 0 cm(-1), while the PSS-GaN substrate has the TDD of similar to 2 x 10(8) cm(-2) and BSF density of similar to 1 x 10(3) cm(-1). Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density. Published by AIP Publishing.
引用
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页数:7
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