Topography effects and wave aberrations in advanced PSM-technology

被引:40
作者
Erdmann, A [1 ]
机构
[1] Fraunhofer Inst Integrated Circuits, Device Technol Div, IIS B, D-91058 Erlangen, Germany
来源
OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷
关键词
lithography modeling; phase shift mask; rigorous diffraction; wave aberration;
D O I
10.1117/12.435734
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Both mask design and quality of the projection optics have a large impact on the performance of a phase shift mask (PSM). Topographic features on the reticle such as etched trenches in alternating PSM produce a spectrum of the diffracted light which differs from that one of an infinitely thin amplitude/phase object as it is assumed in standard imaging algorithms. Many authors have investigated the consequences of this phenomenon with respect to aberration free imaging. However, the diffraction of light from topographic features implies also a modified interaction between the mask and wave aberrations of the projector. Rigorous simulation of the light diffraction from the mask is combined with standard lithography imaging algorithms to explore the interaction of topography effects and wave aberrations. For example, the nominal shift of a phase edge in the final resist profile can result both from topography effects and/or from odd-order wave aberrations such as tilt and coma. The sensitivity of typical lithographic parameters with respect to topography parameters and typical wave aberrations is investigated. PSM are also used for the monitoring of aberrations. Neglecting the topography of these phase objects may result in a misinterpretation of aberration phenomena. Consequences of rigorous diffraction defects for the design and interpretation of phase objects in aberration monitors will be discussed.
引用
收藏
页码:345 / 355
页数:11
相关论文
共 17 条
[1]   Impact of lens aberrations on optical lithography [J].
Brunner, TA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1997, 41 (1-2) :57-67
[2]  
BRUNNER TA, 1994, P SOC PHOTO-OPT INS, V2197, P541, DOI 10.1117/12.175449
[3]   Novel aberration monitor for optical lithography [J].
Dirksen, P ;
Juffermans, C ;
Pellens, R ;
Maenhoudt, M ;
De Bisschop, P .
OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 :77-86
[4]   Impact of high order aberrations on the performance of the aberration monitor [J].
Dirksen, P ;
Juffermans, C ;
Engelen, A ;
De Bisschop, P ;
Muellerke, H .
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :9-17
[5]   Rigorous diffraction analysis for future mask technology [J].
Erdmann, A ;
Friedrich, C .
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :684-694
[6]  
FLAGELLO D, 1997, P SOC PHOTO-OPT INS, V3051, P673
[7]   Optimising edge topography of alternating phase shift masks using rigorous mask modelling [J].
Friedrich, C ;
Mader, L ;
Erdmann, A ;
List, S ;
Gordon, R ;
Kalus, C ;
Griesinger, U ;
Pforr, R ;
Mathuni, J ;
Ruhl, G ;
Maurer, W .
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :1323-1335
[8]   Design and analysis of manufacturable alternating phase-shifting masks [J].
Gordon, RL ;
Mack, CA ;
Petersen, JS .
18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3546 :606-616
[9]  
GORTYCH JE, 1991, P SOC PHOTO-OPT INS, V1463, P368, DOI 10.1117/12.44796
[10]  
PROGLER C, 1998, P SOC PHOTO-OPT INS, V3334, P257