A 2 GHz high isolation DPDT switch MMIC

被引：0

作者：

Yang, Ziqiang ^{[1
]}

Yang, Tao ^{[1
]}

You, Yu ^{[1
]}

Xu, Ruimin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 610054, Sichuan Prov, Peoples R China

来源：

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年

关键词：

DPDT; MMIC; pHEMT; switch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A double-pole double-throw (DPDT) switch monolithic microwave integrated circuit (MMIC) has been designed to operate from de to 2GHz using a commercial 0.18-mu m GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. The DPDT switch employs four shunt FET blocks to achieve high isolation. The ON gate bias is set to 0.6 V to reduce the insertion loss. The simulated results of the DPDT switch chip show an insertion loss of less than 0.61 dB and isolation of more than 50 dB up to 2 GHz.

引用

页码：1238 / 1240

页数：3