Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs

被引：51

作者：

Poller, T. ^{[1
]}

D'Arco, S. ^{[2
]}

Hernes, M. ^{[2
]}

Ardal, A. Rygg ^{[2
]}

Lutz, J. ^{[1
]}

机构：

[1] Tech Univ Chemnitz, D-09107 Chemnitz, Germany

[2] SINTEF Energy Res, N-7491 Trondheim, Norway

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

Packaging; Reliability; Simulation; Press-pack;

D O I：

10.1016/j.microrel.2013.07.130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The press-pack housing was initially available only in monolithic thyristors, diodes and GTOs for high power applications with strict reliability requirements. Due the technological developments of the last years, the IGBT became a common solution for power electronics converters including the higher power range. This trend and the positive experiences on the package created a demand for press-pack IGBTs. However, since the structure of the IGBT cannot be produced on a single wafer, the press pack housing was adopted for a multi die configuration resulting in a completely new structure. The electrical, thermal and mechanical behaviour of such a package is very sensitive to the applied clamping pressure. This paper discusses this dependency for different clamping devices and their resulting pressure distributions. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1755 / 1759

页数：5

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