60Co gamma-irradiation induced defects in MOCVD n-GaN

被引：1

作者：

Umana-Membreno, GA ^{[1
]}

Dell, JM ^{[1
]}

Parish, G ^{[1
]}

Faraone, L ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Western Australia, Dept Elect & Elect Engn, Crawley, WA 6009, Australia

来源：

DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS II | 2001年 / 4593卷

关键词：

gallium nitride; radiation-induced-defects; DLTS;

D O I：

10.1117/12.448853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report transient capacitance measurements performed on MOCVD-grown nominally undoped n-GaN Schottky diodes exposed to Co-60 gamma irradiation. Three radiation-induced defect levels are identifiable at an accumulated dose of 21 Mrad(Si) with thermal activation energies of 88 ? meV, 104 12 meV and 14413 meV, produced at a rate of 2.2 x 10(-3) cm(-1) per 1.25 MeV photon. The isochronal annealing behavior of these defects indicates that they are of similar nature, stable at temperatures <100 C and disappear for annealing temperatures >350 C. The carrier emission and annealing characteristics of these defects are consistent with previously identified nitrogen-vacancy related defects. Three deep-level defects present before irradiation exposure with activation energies of 254, 363 and 586 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).

引用

页码：220 / 227

页数：8

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