Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

被引：31

作者：

Bhandari, Harish B. ^{[1
,2
]}

Yang, Jing ^{[1
]}

Kim, Hoon ^{[1
,3
]}

Lin, Youbo ^{[1
,4
]}

Gordon, Roy G. ^{[1
]}

Wang, Qing Min ^{[5
]}

Lehn, Jean-Sebastien M. ^{[5
]}

Li, Huazhi ^{[5
]}

Shenai, Deo ^{[5
]}

机构：

[1] Harvard Univ, Cambridge, MA 02138 USA

[2] RMD Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

[3] Albany NanoTech, Globalfoundries, Albany, NY 12203 USA

[4] IBM East Fishkill, Globalfoundries, Hopewell Jct, NY 12533 USA

[5] Dow Chem Co USA, Dow Elect Mat, N Andover, MA 01845 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 05期

关键词：

DIFFUSION BARRIER; THIN-FILM; METALLIZATION; ELECTRODEPOSITION; CVD; CU; METAL;

D O I：

10.1149/2.005205jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An interlayer of face centered cubic (fcc) Co4N has demonstrated significant improvements in adhesion between copper and diffusion barrier layers. This fcc phase of Co4N was prepared by chemical vapor deposition (CVD) using bis(N-tert-butyl-N'-ethyl-propionamidinato) cobalt(II) and a reactant mixture of NH3 and H-2 at substrate temperatures from 100 to 180 degrees C. The Co/N atomic ratio and the phase of cobalt nitride film can be modified by adjusting the ratio of NH3 and H-2 in the gas feedstock. The cobalt nitride films prepared by CVD are smooth, highly conformal, and stable against intermixing with copper up to at least 400 degrees C. This fcc cobalt nitride material has very strong adhesion to copper due to the small lattice mismatch (-1 to 2%) between fcc-Co4N and fcc Cu. Copper wires should be stabilized against failure by electromigration when fcc cobalt nitride interlayers are placed between the copper and surrounding diffusion barriers. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：N79 / N84

页数：6

共 27 条

[1] Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers [J].

Au, Yeung ;

Lin, Youbo ;

Gordon, Roy G. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :D248-D253

[2]

Damayanti M, 2006, J ELECTROCHEM SOC, V153, pJ41, DOI 10.1149/1.2188328

[3] CALIBRATION OF THE HARWELL SERIES-II BI-IMPLANTED RBS STANDARDS [J].

DAVIES, JA ;

JACKMAN, TE ;

ESCHBACH, HL ;

DOBMA, W ;

WATJEN, U ;

CHIVERS, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :238-240

[4] Adhesion studies of CVD copper metallization [J].

Gandikota, S ;

Voss, S ;

Tao, R ;

Duboust, A ;

Cong, D ;

Chen, LY ;

Ramaswami, S ;

Carl, D .

MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) :547-553

[5] Synthesis and characteristics of nanocrystalline Co/N thin film containing CO4N phase [J].

Jia, Hui ;

Wang, Xin ;

Zheng, Weitao ;

Chen, Yan ;

Feng, Shouhua .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 150 (02) :121-124

[6] Iridium barriers for direct copper electrodeposition in damascene processing [J].

Josell, D ;

Bonevich, JE ;

Moffat, TP ;

Aaltonen, T ;

Ritala, M ;

Leskelä, M .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (02) :C48-C50

[7] Osmium barriers for direct copper electrodeposition in Damascene processing [J].

Josell, D ;

Witt, C ;

Moffat, TP .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (02) :C41-C43

[8] Ultrathin diffusion barriers/liners for gigascale copper metallization [J].

Kaloyeros, AE ;

Eisenbraun, E .

ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 :363-385

[9] Cu wettability and diffusion barrier property of Ru thin film for Cu metallization [J].

Kim, H ;

Koseki, T ;

Ohba, T ;

Ohta, T ;

Kojima, Y ;

Sato, H ;

Shimogaki, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (08) :G594-G600

[10] Ultrathin CVD Cu seed layer formation using copper oxynitride deposition and room temperature remote hydrogen plasma reduction [J].

Kim, Hoon ;

Bhandari, Harish B. ;

Xu, Sheng ;

Gordon, Roy G. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (07) :H496-H503

← 1 2 3 →