Accurate SPICE Model of Forward-Biased Silicon PIN Mach-Zehnder Modulator for an Energy-Efficient Multilevel Transmitter

被引:11
作者
Tanaka, Shinsuke [1 ]
Usuki, Tatsuya [1 ]
Tanaka, Yu [1 ]
机构
[1] Photon Elect Technol Res Assoc, Tsukuba, Ibaraki 3058567, Japan
关键词
Multi-level opticalmodulation; PIN phase shifter; silicon photonics; SPICE model;
D O I
10.1109/JLT.2018.2797184
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A precise device model of a silicon forward-biased PIN phase shifter was developed to realize a codesign of an integrated multilevel optical transmitter combining a compact silicon-based Mach-Zehnder modulator (MZM) and a low-power CMOS driver circuit by utilizing SPICE simulation. Both electric and optical responses of the PIN phase shifter were carefully investigated at various bias conditions and temperatures in order to build a SPICE device model that precisely emulates a highly nonlinear electric-to-optical (EO) response of the PIN phase shifter. The validity of the developed model was assessed for a dc response, small-signal RF electric, and optical responses, and also for large-signal EO responses. The simulation outputs exhibited very good agreement with the responses measured at each operation condition. Using this PIN phase shifter model, we designed a multilevel optical transmitter integrating a 750-mu m long silicon PIN-based MZM with a 28-nm CMOS driver circuit via passive RC circuit equalizers. The SPICE simulation demonstrated the feasibility of the integrated transmitter for 56 Gbps PAM4 operation with a very high energy efficiency: 1.2 mW/Gbps.
引用
收藏
页码:1959 / 1969
页数:11
相关论文
共 19 条
[1]   Compact PIN-Diode-Based Silicon Modulator Using Side-Wall-Grating Waveguide [J].
Akiyama, Suguru ;
Imai, Masahiko ;
Baba, Takeshi ;
Akagawa, Takeshi ;
Hirayama, Naoki ;
Noguchi, Yoshiji ;
Seki, Miyoshi ;
Koshino, Keiji ;
Toyama, Munehiro ;
Horikawa, Tsuyoshi ;
Usuki, Tatsuya .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (06)
[2]   25-Gb/s broadband silicon modulator with 0.31-V.cm VπL based on forward-biased PIN diodes embedded with passive equalizer [J].
Baba, Takeshi ;
Akiyama, Suguru ;
Imai, Masahiko ;
Usuki, Tatsuya .
OPTICS EXPRESS, 2015, 23 (26) :32950-32960
[3]   Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm [J].
Chagnon, Mathieu ;
Osman, Mohamed ;
Poulin, Michel ;
Latrasse, Christine ;
Gagne, Jean-Frederic ;
Painchaud, Yves ;
Paquet, Carl ;
Lessard, Stephane ;
Plant, David .
OPTICS EXPRESS, 2014, 22 (17) :21018-21036
[4]  
Gill D.M., 2015, IEEE Journal of Selected Topics in Quantum Electronics, V21, P212
[5]  
Hayakawa A., 2015, P OPT FIB COMM C
[6]   Flexible Transmitter Employing Silicon-Segmented Mach-Zehnder Modulator With 32-nm CMOS Distributed Driver [J].
Huynh, Tam N. ;
Dupuis, Nicolas ;
Rimolo-Donadio, Renato ;
Proesel, Jonathan E. ;
Gill, Doug M. ;
Baks, Christian W. ;
Rylyakov, Alexander V. ;
Schow, Clint L. ;
Green, William M. J. ;
Lee, Benjamin G. .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2016, 34 (22) :5129-5136
[7]  
Kato T., 2011, P OPT FIB COMM C
[8]  
Mazzini M., 2015, P OPT FIB COMM C EXH
[9]  
Narasimha A., 2010, P OPT FIB COMM C
[10]  
RAKOWSKI M, 2015, PROC IEEE ISSCC DIG, V58, P408