A Family of Memristive-Transfer Functions of Negative-Feedback Nullor-Based Amplifiers

被引:1
作者
Hernandez-Mejia, Carlos [1 ]
Sarmiento-Reyes, Arturo [1 ]
Vazquez-Leal, Hector [2 ]
机构
[1] INAOE, Dept Elect, Puebla 72000, Pue, Mexico
[2] Univ Veracruzana, Fac Instrumentac & Ciencias Atmosfer Maestria Ing, Xalapa 91000, Ver, Mexico
关键词
Memristor; Memristive systems; Behavioral memristor model; Negative-feedback amplifiers; SPICE MODEL; CIRCUITS; SYSTEMS; DEVICES;
D O I
10.1007/s00034-015-0013-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Memristors, memristive systems and mem-elements have been introduced in recent years as key devices for featuring novel possibilities for signal processing both digital and analog. The variable resistance of the memristor has been used as a powerful feature for the realization of new circuits. In this paper, the memristor is applied to the design of nullor-based negative-feedback amplifiers. The principal result of this application consists in the generation of a new family of memristive-transfer functions for all types of amplifiers: voltage, transconductance, transresistance and current. This novel idea represents the new version of the conventional negative-feedback amplifiers and introduces the use of the memristor as feedback element. A behavioral model based on the - relationship of the memristor is introduced which results helpful for simulating the new amplifiers. The nullor-based negative-feedback amplifiers with memristor are inspected by cases of study. In addition, the trans-mem conductance amplifier is widely studied with one nullor implementation, namely MOS. The implementation yields hybrid (MOS/memristor) circuits.
引用
收藏
页码:3431 / 3447
页数:17
相关论文
共 32 条
  • [1] Abdalla H, 2011, IEEE INT SYMP CIRC S, P1832, DOI 10.1109/ISCAS.2011.5937942
  • [2] Three Fingerprints of Memristor
    Adhikari, Shyam Prasad
    Sah, Maheshwar Pd
    Kim, Hyongsuk
    Chua, Leon O.
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2013, 60 (11) : 3008 - 3021
  • [3] Memristor Model Comparison
    Ascoli, Alon
    Corinto, Fernando
    Senger, Vanessa
    Tetzlaff, Ronald
    [J]. IEEE CIRCUITS AND SYSTEMS MAGAZINE, 2013, 13 (02) : 89 - 105
  • [4] A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling
    Batas, Daniel
    Fiedler, Horst
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (02) : 250 - 255
  • [5] A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM
    Berdan, Radu
    Lim, Chuan
    Khiat, Ali
    Papavassiliou, Christos
    Prodromakis, Themis
    [J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) : 135 - 137
  • [6] Biolek Z, 2009, RADIOENGINEERING, V18, P210
  • [7] 'Memristive' switches enable 'stateful' logic operations via material implication
    Borghetti, Julien
    Snider, Gregory S.
    Kuekes, Philip J.
    Yang, J. Joshua
    Stewart, Duncan R.
    Williams, R. Stanley
    [J]. NATURE, 2010, 464 (7290) : 873 - 876
  • [8] Resistance switching memories are memristors
    Chua, Leon
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04): : 765 - 783
  • [9] MEMRISTIVE DEVICES AND SYSTEMS
    CHUA, LO
    KANG, SM
    [J]. PROCEEDINGS OF THE IEEE, 1976, 64 (02) : 209 - 223
  • [10] MEMRISTOR - MISSING CIRCUIT ELEMENT
    CHUA, LO
    [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +