Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

被引：30

作者：

Pecora, Emanuele Francesco ^{[1
,2
]}

Murphy, Thomas I. ^{[1
,2
]}

Dal Negro, Luca ^{[1
,2
,3
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[3] Boston Univ, Div Mat Sci & Engn, Brookline, MA 02446 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 19期

基金：

美国国家科学基金会;

关键词：

II-VI semiconductors; light emitting devices; rare earth compounds; sputtering; zinc compounds; M EMISSION DYNAMICS; OXIDE THIN-FILMS; MU-M; OPTICAL-PROPERTIES; ENERGY-TRANSFER; SILICON; NANOCRYSTALS; ERBIUM; ELECTROLUMINESCENCE; BIOCOMPATIBILITY;

D O I：

10.1063/1.4766947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a light emitting material platform based on rare-earth doping of Si-rich ZnO thin films by magnetron sputtering, and we investigate the near-infrared emission properties under both optical and electrical injection. Er and Nd radiative transitions were simultaneously activated due to energy transfer via the ZnO direct bandgap and its luminescent defect centers. Moreover, by incorporating Si atoms, we demonstrate Si-mediated enhancement of photoluminescence in Er-doped ZnO and electroluminescence. These results pave the way to novel Si-compatible light emitters that leverage the optically transparent and electrically conductive ZnO matrix for multiband near-IR telecom and bio-compatible applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766947]

引用

页数：5

共 36 条

[1] Spectroscopic studies of Nd3+-doped silicon-rich silicon oxide films [J].

Breard, D. ;

Gourbilleau, F. ;

Dufour, C. ;

Rizk, R. ;

Doualan, J. -L. ;

Camy, P. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 146 (1-3) :179-182

[2] Effect of oxygen deficiency on optical band gap shift in Er-doped ZnO thin films [J].

Chen, Y. ;

Xu, X. L. .

PHYSICA B-CONDENSED MATTER, 2011, 406 (17) :3121-3124

[3] Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides -: art. no. 261103 [J].

Daldosso, N ;

Navarro-Urrios, D ;

Melchiorri, M ;

Pavesi, L ;

Gourbilleau, F ;

Carrada, M ;

Rizk, R ;

García, C ;

Pellegrino, P ;

Garrido, B ;

Cognolato, L .

APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3

[4] Electrical and photoconductive properties of vertical ZnO nanowires in high density arrays [J].

Fan, Zhiyong ;

Dutta, Deepanshu ;

Chien, Chung-Jen ;

Chen, Hsiang-Yu ;

Brown, Evan C. ;

Chang, Pai-Chun ;

Lu, Jia G. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[5] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES [J].

FAVENNEC, PN ;

LHARIDON, H ;

MOUTONNET, D ;

SALVI, M ;

GAUNEAU, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04) :L524-L526

[6] Transparent conducting oxides for photovoltaics [J].

Fortunato, Elvira ;

Ginley, David ;

Hosono, Hideo ;

Paine, David C. .

MRS BULLETIN, 2007, 32 (03) :242-247

[7] The excitation mechanism of rare-earth ions in silicon nanocrystals [J].

Franzò, G ;

Vinciguerra, V ;

Priolo, F .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :3-12

[8] Role of the Si excess on the excitation of Er doped SiOx [J].

Franzo, Giorgia ;

Pecora, Emanuele ;

Priolo, Francesco ;

Iacona, Fabio .

APPLIED PHYSICS LETTERS, 2007, 90 (18)

[9] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].

Fujii, M ;

Yoshida, M ;

Kanzawa, Y ;

Hayashi, S ;

Yamamoto, K .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200

[10]

Gümüs C, 2006, J OPTOELECTRON ADV M, V8, P299

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