Design with Sub-10 nm FinFET Technologies

被引：0
作者：
Clark, Lawrence T. [1 ]
Vashishtha, Vinay [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：87
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