Impact of Dysprosium doping on the structural and electrical properties of BiSbTe3 single crystals

被引：0

作者：

Yadav, Nisha ^{[1
]}

Anoop, M. D. ^{[1
]}

Yadav, Jyoti ^{[1
]}

Singh, Rini ^{[2
]}

Bera, Nabarun ^{[1
]}

Jain, Ankur ^{[3
]}

Ichikawa, Takayuki ^{[2
]}

Awasthi, Kamlendra ^{[1
]}

Kumar, Manoj ^{[1
]}

机构：

[1] Malaviya Natl Inst Technol Jaipur, Dept Phys, Jaipur 302017, Rajasthan, India

[2] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan

[3] Hiroshima Univ, Nat Sci Ctr Basic Res & Dev, Higashihiroshima 7398530, Japan

来源：

MATERIALS TODAY-PROCEEDINGS | 2022年 / 67卷

关键词：

Topological Insulator; Single crystal; Rare earth doping; Resistivity; Hall measurements; DY;

D O I：

10.1016/j.matpr.2022.07.351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Breaking of time reversal symmetry in 3D topological insulators and tuning of Fermi level in the vicinity of the Dirac point is a prerequisite for unravelling various exotic physical phenomena which might be leveraged for potential technological device applications. Here we account effective single crystal growth of (BiSb)2-xDyxTe3 where x = 0, 0.005, 0.05 using modified Bridgman method. The structural, morpholog-ical, electrical and Hall measurements were performed on the synthesized single crystals. X-ray Diffraction (XRD) measurements confirmed high quality crystal growth with unidirectional orientation of the synthesized crystals. The lattice parameters were found decreasing with Dysprosium (Dy) doping thereby decreasing the lattice volume,indicating the incorporation of Dy atoms in the lattice of BiSbTe3. Scanning Electron Microscopy (SEM) confirmed the layered morphology of synthesized crystals while Energy Dispersive X-ray Spectroscopy (EDX) measurements revealed the uniform distribution of all the elements as well as stoichiometry of prepared crystals. The resistivity versus temperature (q-T) plot from 4 K to 300 K showed metallic behaviour of crystals with an increase in resistivity with Dy doping. The Hall resistivity (qxy) demonstrates that holes are the predominant charge carriers. The Hall data revealed dis-placement of Fermi level with Dy doping. These results are indicative to the shift in the Fermi level in the vicinity of the Dirac point.Copyright (c) 2022 Elsevier Ltd. All rights reserved.Selection and peer-review under responsibility of the scientific committee of the Recent Advancements in Materials Science and Nanotechnology.

引用

页码：271 / 275

页数：5

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