Real-Time Observation Of Crystallographic Tilting InGaAs Layers On GaAs Offcut Substrates

被引：0

作者：

Nishi, Toshiaki ^{[1
]}

Sasaki, Takuo ^{[1
]}

Ikeda, Kazuma ^{[1
]}

Suzuki, Hidetoshi

Takahasi, Masamitu

Shimomura, Kenichi ^{[1
]}

Kojima, Nobuaki ^{[1
]}

Ohshita, Yoshio ^{[1
]}

Yamaguchi, Masafumi ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9) | 2013年 / 1556卷

关键词：

InGaAs; X-ray; reciprocal space mapping; crystallographic; tilt; dislocation;

D O I：

10.1063/1.4822188

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In situ X-ray reciprocal space mapping during InxGa1-xAs/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.

引用

页码：14 / 17

页数：4