Real-Time Observation Of Crystallographic Tilting InGaAs Layers On GaAs Offcut Substrates

被引：0
|
作者：
Nishi, Toshiaki [1 ]
Sasaki, Takuo [1 ]
Ikeda, Kazuma [1 ]
Suzuki, Hidetoshi
Takahasi, Masamitu
Shimomura, Kenichi [1 ]
Kojima, Nobuaki [1 ]
Ohshita, Yoshio [1 ]
Yamaguchi, Masafumi [1 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9) | 2013年 / 1556卷
关键词：
InGaAs; X-ray; reciprocal space mapping; crystallographic; tilt; dislocation;
D O I：
10.1063/1.4822188
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In situ X-ray reciprocal space mapping during InxGa1-xAs/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.
引用
收藏
页码：14 / 17
页数：4
相关论文
共 21 条
  • [1] InGaAs layers of high quality grown on patterned GaAs substrates with trenches
    Iida, S
    Hayakawa, Y
    Koyama, T
    Kumagawa, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 75 - 78
  • [2] Structural investigation of metalorganic chemical-vapor-deposition-grown InGaAs layers on misoriented GaAs substrates
    Takano, Y
    Masuda, M
    Shirakawa, Y
    Kuwahara, K
    Fuke, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (9AB): : L901 - L904
  • [3] Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates
    Vanhollebeke, K
    Moerman, I
    Van Daele, P
    Demeester, P
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (07) : 933 - 939
  • [4] Reciprocal lattice mapping of InGaAs layers grown on InP (001) and GaAs (001) substrates
    Bak-Misiuk, J
    Kaniewski, J
    Domagala, J
    Reginski, K
    Adamczewska, J
    Trela, J
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 47 - 52
  • [5] Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates
    Mashita, M
    Hiyama, Y
    Arai, K
    Koo, BH
    Yao, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4435 - 4437
  • [6] Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates
    K. Vanhollebeke
    I. Moerman
    P. Van Daele
    P. Demeester
    Journal of Electronic Materials, 2000, 29 : 933 - 939
  • [7] Metalorganic vapor phase epitaxy of InAs layers on GaAs substrates using low-temperature growth of InGaAs graded buffer layers
    Takano, Y
    Umezawa, M
    Shirakata, S
    Fuke, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7B): : L944 - L946
  • [8] Real-time control of the MBE growth of InGaAs on InP
    Roth, JA
    Chow, DH
    Olson, GL
    Brewer, PD
    Williamson, WS
    Johs, B
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 31 - 35
  • [9] Threading dislocations and phase separation in InGaAs layers on GaAs substrates grown by low-temperature metalorganic vapor phase epitaxy
    Takano, Y
    Kobayashi, K
    Iwahori, H
    Umezawa, M
    Shirakata, S
    Fuke, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6403 - 6411
  • [10] Real-Time Observation of AZ91 Solidification by Synchrotron Radiography
    Zeng, G.
    Nogita, K.
    Belyakov, S.
    Xian, J. W.
    McDonald, S. D.
    Yang, K. V.
    Yasuda, H.
    Gourlay, C. M.
    MAGNESIUM TECHNOLOGY 2017, 2017, : 597 - 603
123