Optical photonic crystal sensor based on U-shaped ring resonator
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作者:
Alioueche, A.
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Univ Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, AlgeriaUniv Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, Algeria
Alioueche, A.
[1
]
Benmerkhi, A.
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Univ Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, AlgeriaUniv Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, Algeria
Benmerkhi, A.
[1
]
Bouchemat, M.
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Univ Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, AlgeriaUniv Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, Algeria
Bouchemat, M.
[1
]
机构:
[1] Univ Freres Mentouri, Fac Sci Technol, Dept Elect, Lab LMI, Route Ain El Bey, Constantine 1, Algeria
This work is a proposal for a new structure of voltage sensor based on photonic crystals; it is composed of U-shaped photonic crystal ring resonator placed between two waveguides. The sensors structures have been changed in order to improve important sensor parameters such as quality factor and transmission. A large quality factor induces a good light confinement in semiconductor defect, making the photon more sensitive to voltage variation. The studied device offers nearly 100% transmission efficiency and a quality factor about 24,064. The electro-optical materials properties are ideally suited for narrow-channel optical communication systems and sensing applications. The values of about 622.22 nm/RIU, 1.12 nm/V and 2.24 nm per kV/mm have been obtained for refractive index sensitivity (Sn), the voltage sensitivity (SV) and the electric field sensitivity (SE), respectively. The simulation results presented in this paper have been analyzed by the two-methods plane wave expansion (PWE) and finite-difference time-domain (FDTD) using the Rsoft software.
机构:
Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Benmerkhi, Ahlem
;
Bounouioua, Amel
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Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Bounouioua, Amel
;
Bouchemat, Mohamed
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Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Bouchemat, Mohamed
;
Bouchemat, Touraya
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Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
机构:
Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Benmerkhi, Ahlem
;
Bounouioua, Amel
论文数: 0引用数: 0
h-index: 0
机构:
Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Bounouioua, Amel
;
Bouchemat, Mohamed
论文数: 0引用数: 0
h-index: 0
机构:
Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria
Bouchemat, Mohamed
;
Bouchemat, Touraya
论文数: 0引用数: 0
h-index: 0
机构:
Univ Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, AlgeriaUniv Freres Mentouri, Lab LMI, Dept Elect, Fac Sci Technol, Route Ain El Bey, Constantine 25000 1, Algeria