Role of Charge Density Wave in Monatomic Assembly in Transition Metal Dichalcogenides

被引：31

作者：

Feng, Haifeng ^{[1
]}

Xu, Zhongfei ^{[2
,3
]}

Zhuang, Jincheng ^{[2
,3
]}

Wang, Li ^{[1
]}

Liu, Yani ^{[1
,2
,3
]}

Xu, Xun ^{[1
,2
,3
]}

Song, Li ^{[4
]}

Hao, Weichang ^{[2
,3
]}

Du, Yi ^{[1
,2
,3
]}

机构：

[1] Univ Wollongong, AIIM, ISEM, Wollongong, NSW 2500, Australia

[2] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China

[3] Beihang Univ, BUAA UOW Joint Res Ctr, Beijing 100191, Peoples R China

[4] Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2019年 / 29卷 / 15期

基金：

北京市自然科学基金; 澳大利亚研究理事会;

关键词：

charge density wave; monatomic assembly; scanning tunneling microscopy; surface chemical adsorption; transition metal dichalcogenides; PHASE-TRANSITION; TIN CATALYSTS; SINGLE-LAYER; SURFACE; SELECTIVITY; REDUCTION; ORDER; MECHANISM; GROWTH; MOS2;

D O I：

10.1002/adfm.201900367

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The charge density wave (CDW) in transition metal dichalcogenides (TMDs) has drawn tremendous interest due to its potential for tailoring their surface electronic and chemical properties. Due to technical challenges, however, how the CDW could modulate the chemical behavior of TMDs is still not clear. Here, this work presents a study of applying the CDW of NbTe2, with a high transition temperature above room temperature, to generate the assembling adsorption of Sn adatoms on the surface. It is shown that highly ordered monatomic Sn adatoms with a quasi-1D structure can be obtained under regulation by the single-axis CDW of the substrate. In addition, the CDW modulated superlattices could in turn change the surface electronic properties from semimetallic to metallic. These results demonstrate an effective approach for tuning the surface chemical properties of TMDs by their CDWs, which could be applied in exploring them for various practical applications, such as heterogeneous catalysis, epitaxial growth of low-dimensional materials, and future nanoelectronics.

引用

页数：7

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