The nature of Mn center and exchange interaction in Ga1-xMnxAs dilute magnetic semiconductor

被引：15
作者：
Twardowski, A [1 ]
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 63卷 / 1-2期
关键词：
dilute magnetic semiconductors; exchange interaction; spin resonance;
D O I：
10.1016/S0921-5107(99)00058-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The s,p-d exchange interaction in GaMnAs is discussed in view of different charge states of Mn impurities present in this material. The ferromagnetic to antiferromagnetic crossover of p-d exchange is discussed on the grounds of varying concentration of neutral and ionized Mn acceptor centers in bulk, Mn-doped GaAs and GaMnAs epilayers. (C) 1999 Elsevier Science S.A.. All rights reserved.
引用
收藏
页码：96 / 102
页数：7
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