Frequency shifts of the E2high Raman mode due to residual stress in epitaxial ZnO thin films

被引：19

作者：

Harriman, T. A. ^{[1
]}

Bi, Z. ^{[2
]}

Jia, Q. X. ^{[2
]}

Lucca, D. A. ^{[1
]}

机构：

[1] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

[2] Los Alamos Natl Lab, MPA CINT, Los Alamos, NM 87522 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 12期

基金：

美国国家科学基金会;

关键词：

ZINC-OXIDE; SAPPHIRE; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; ZNO/ALPHA-AL2O3; PARAMETERS; DEPOSITION; SCATTERING; PLASMA;

D O I：

10.1063/1.4821222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the stress effect on the E-2(high) Raman vibration mode, we grew heteroepitaxial ZnO films on c-plane sapphire with different strain states by changing the film thicknesses between 5 and 100 nm. To determine the relationship between the observed frequency of the E-2(high) mode with the biaxial residual stress of the ZnO thin films, the out-of-plane strain of films were measured with x-ray diffraction from which the residual stress was calculated. The biaxial residual stress and E-2(high) frequency were related linearly by a factor of similar to 170 MPa/cm(-1), which is in agreement with reported values from high pressure investigations of bulk ZnO. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 23 条

[21] Raman spectroscopy of sputtered AlN films:: E2(high) biaxial strain dependence [J].

Trodahl, H. J. ;

Martin, F. ;

Muralt, P. ;

Setter, N. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[22] Zinc oxide thin films synthesized by metal organic chemical reactions [J].

Yasuda, T ;

Segawa, Y .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :676-679

[23] Effect of thickness on the structure and properties of ZnO thin films prepared by pulsed laser deposition [J].

Zhu, Bai Lin ;

Sun, Xiao Hua ;

Guo, Shi Shang ;

Zhao, Xing Zhong ;

Wu, Juan ;

Wu, Run ;

Liu, Jing .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A) :7860-7865

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