Frequency shifts of the E2high Raman mode due to residual stress in epitaxial ZnO thin films

被引：19

作者：

Harriman, T. A. ^{[1
]}

Bi, Z. ^{[2
]}

Jia, Q. X. ^{[2
]}

Lucca, D. A. ^{[1
]}

机构：

[1] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

[2] Los Alamos Natl Lab, MPA CINT, Los Alamos, NM 87522 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 12期

基金：

美国国家科学基金会;

关键词：

ZINC-OXIDE; SAPPHIRE; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; ZNO/ALPHA-AL2O3; PARAMETERS; DEPOSITION; SCATTERING; PLASMA;

D O I：

10.1063/1.4821222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the stress effect on the E-2(high) Raman vibration mode, we grew heteroepitaxial ZnO films on c-plane sapphire with different strain states by changing the film thicknesses between 5 and 100 nm. To determine the relationship between the observed frequency of the E-2(high) mode with the biaxial residual stress of the ZnO thin films, the out-of-plane strain of films were measured with x-ray diffraction from which the residual stress was calculated. The biaxial residual stress and E-2(high) frequency were related linearly by a factor of similar to 170 MPa/cm(-1), which is in agreement with reported values from high pressure investigations of bulk ZnO. (C) 2013 AIP Publishing LLC.

引用

页数：4

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