Driving Force of Phase Transition in Indium Nanowires on Si(111)

被引:32
作者
Kim, Hyun-Jung
Cho, Jun-Hyung [1 ]
机构
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
基金
新加坡国家研究基金会;
关键词
METAL-INSULATOR-TRANSITION; QUANTUM CHAINS; ELECTRON; INSTABILITY; MOLECULES;
D O I
10.1103/PhysRevLett.110.116801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 8 x 2 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 4 x 1 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting. DOI: 10.1103/PhysRevLett.110.116801
引用
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页数:5
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