Magnesium-doped cuprous oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor

被引：25

作者：

Resende, Joao ^{[1
,2
]}

Jimenez, Carmen ^{[1
]}

Ngoc Duy Nguyen ^{[2
]}

Deschanvres, Jean-Luc ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble, France

[2] Solid State Phys Interfaces & Nanostruct, Inst Phys B5a, Allee Six Aout 19, B-4000 Liege, Belgium

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 09期

关键词：

Cu2O; magnesium; MOCVD; p-type doping; thin films; transparent conductive oxides; ELECTRONIC-STRUCTURE; GROWTH; CU2O;

D O I：

10.1002/pssa.201532870

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lack of a successful p-type transparent semiconductor delays the future implementation of transparent electronics. In the group semiconducting compounds, cuprous oxide (Cu2O) presents promising electrical and manufacturing features that establish it as a suitable candidate for p-type transparent semiconductors. However, high absorbance in the visible range reduces its application practical devices. In this work, we achieved the incorporation of magnesium in cuprous oxide grown by aerosol-assisted metal-organic chemical vapour deposition. The fabricated doped thin films reached up to 17% of magnesium, resulting in morphology changes. Electrical resistivity was reduced down to values as low as 6.6 Omega cm, due to the increase of charge-carrier density. The optical transparency was enhanced compared to intrinsic cuprous oxide. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2296 / 2302

页数：7

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