Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

被引：13

作者：

Bansal, Kanika ^{[1
]}

Datta, Shouvik ^{[1
]}

机构：

[1] Indian Inst Sci Educ & Res, Div Phys, Pune 411008, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

关键词：

CARRIER ESCAPE;

D O I：

10.1063/1.4790609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a reversal in negative capacitance (NC) and voltage modulated light emission from AlGaInP based multi-quantum well (QW) electroluminescent diodes under temperature variation. Unlike monotonically increasing continuous wave light emission with decreasing temperature, modulated electroluminescence and negative capacitance first increase to a maximum and then decrease while cooling down from room temperature. Interdependence of such electronic and optical properties is understood as a competition between defect participation in radiative recombination and field assisted carrier escape from the quantum well region during temperature variation. The temperature of maximum light emission must coincide with the operating temperature of a device for better efficiency. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790609]

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页数：4

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