Relationship between excess Ga and residual oxides in amorphous GaN films deposited by compound source molecular beam epitaxy

被引：10

作者：

Obinata, N ^{[1
]}

Sugimoto, K ^{[1
]}

Ijima, K ^{[1
]}

Ishibiki, M ^{[1
]}

Egawa, S ^{[1
]}

Honda, T ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 12期

关键词：

GaN; oxidation; XPS; CL; MBE;

D O I：

10.1143/JJAP.44.8432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous GaN (a-GaN) films were deposited at a low temperature below 500 degrees C by compound-source molecular beam epitaxy (CS-MBE). The relationship between excess Ga and its oxidation in the deposited GaN films is reported. X-ray photoelectron spectroscopy (XPS) revealed that the excess Ga in deposited films was oxidized in the air and converted to gallium oxide. By increasing the substrate temperature, the total amount of gallium oxide in the deposited films decreased due to the reduction of the excess Ga. Cathodoluminescence (CL) intensity from the UV to the blue spectral regions increased with as the amount of gallium oxide in the deposited films decreased.

引用

页码：8432 / 8434

页数：3

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