An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

被引：66

作者：

Jung, Kwang-Hee ^{[1
]}

Lee, Kyu Hyoung ^{[2
]}

Seo, Won-Seon ^{[1
]}

Choi, Soon-Mok ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Green Ceram Div, Seoul 153801, South Korea

[2] Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期

关键词：

Electric power factor - Gallium - II-VI semiconductors - Carrier concentration - Thermoelectric power;

D O I：

10.1063/1.4729560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O was larger than that of Zn0.990Ga0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn0.985Ga0.015O bulk exhibited a power factor of 12.5 mu Wcm(-1) K-2. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729560]

引用

页数：4

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