Nonvolatile memory performance improvements for solution- processed thin- film transistors with composition- modified In- Zn- Ti- O active channel and ferroelectric copolymer gate insulator

被引：8
作者：
Bak, Jun Yong [1 ]
Jung, Soon Won [2 ]
Yoon, Sung Min [1 ]
机构：
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[2] ETRI, Next Generat Display Res Dept, Taejon 305350, South Korea
来源：
ORGANIC ELECTRONICS | 2013年 / 14卷 / 09期
关键词：
Oxide semiconductor; Memory thin-film transistor; Ferroelectric gate insulator; In-Zn-Ti-O; P(VDF-TrFE); FIELD-EFFECT TRANSISTORS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); OXIDE SEMICONDUCTOR; OPERATION;
D O I：
10.1016/j.orgel.2013.05.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nonvolatile memory thin-film transistors (M-TFTs) using a solution-processed indium-zinc-titanium oxide (IZTiO) active channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator were fabricated and characterized to elucidate the relationships between the IZTiO channel composition and the memory performances such as program speed and data retention. The compositions of the spin-coated IZTiO layers were modified with different Ti amounts of 0, 2, 5, and 10 mol%. The carrier concentration of IZTiO channel layer was effectively modulated by the incorporated Ti amounts and the defect densities within the channel were effectively reduced by Ti incorporation. The M-TFT fabricated with IZTiO channel with 2-mol% Ti composition exhibited the best overall device performances, in which the mu(FE), SS, MW, and programmed I-on/off were obtained to be 23.6 cm(2) V-1 s(-1), 701 mV/decade, 11.8 V, and 1.2 x 10(5), respectively. Furthermore, thanks to the suitable amounts of Ti incorporation into the IZO, the improved program speed and data retention properties were successfully confirmed. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：2148 / 2157
页数：10
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