Giant tunneling magnetoresistance in Co2MnSi/Al-O/Co2MnSi magnetic tunnel junctions

被引：497

作者：

Sakuraba, Y.

Hattori, M.

Oogane, M.

Ando, Y.

Kato, H.

Sakuma, A.

Miyazaki, T.

Kubota, H.

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanoelectr Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2202724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/Al-O/Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.(c) 2006 American Institute of Physics.

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页数：3

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