Giant tunneling magnetoresistance in Co2MnSi/Al-O/Co2MnSi magnetic tunnel junctions

被引：491
作者：
Sakuraba, Y.
Hattori, M.
Oogane, M.
Ando, Y.
Kato, H.
Sakuma, A.
Miyazaki, T.
Kubota, H.
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanoelectr Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
基金：
日本学术振兴会; 日本科学技术振兴机构;
关键词：
D O I：
10.1063/1.2202724
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/Al-O/Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.(c) 2006 American Institute of Physics.
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