Chemistry of gallium .6. Tris(trimethylsilyl)silylgallium(I) - An experimental and theoretical study

被引：68

作者：

Linti, G

机构：

[1] Inst. für Anorganische Chemie, Universität Karlsruhe, D-76128 Karlsruhe

来源：

JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1996年 / 520卷 / 1-2期

关键词：

gallium silyl; gallium(I) compounds; ab initio; silyl derivatives; hypersilyl gallium;

D O I：

10.1016/0022-328X(96)06317-6

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The gallium(I)tris(trimethylsilyl)silyl compound {GaSi(SiMe(3))(3)}(4) (1) is obtained by reaction of Ga2Cl4-2dioxane with LiSi(SiMe(3))(3)-3THF. The crystal structure of 1 reveals a tetramer with a nearly regular tetrahedral framework of gallium atoms. The gallium-gallium distances average 258.4pm. Ab initio calculations on various substituted gallium tetrahedrons showed a greater stability of silyl-substituted cages compared with organyl substituted ones. Crystal data, with Mo K alpha radiation are as follows: {GaSi(SiMe(3))(3)}(4) . Si(SiMe(3))(4) (1), a, b = 1923.3(3)pm, c = 2671.2(4)pm, V = 9.881(3)nm(3); tetragonal space group P4/ncc; Z = 4; 1513 (I>2 sigma(I)) data; R1 = 0.068.

引用

页码：107 / 113

页数：7

共 62 条

[1] ELECTRONIC-STRUCTURE CALCULATIONS ON WORKSTATION COMPUTERS - THE PROGRAM SYSTEM TURBOMOLE [J].