Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes

被引：51

作者：

Ge, Jun ^{[1
]}

Dong, Xianlin ^{[1
]}

Chen, Ying ^{[1
]}

Cao, Fei ^{[1
]}

Wang, Genshui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

基金：

中国国家自然科学基金;

关键词：

EPITAXIAL FERROELECTRIC HETEROSTRUCTURES; SOL-GEL PROCESS; ELECTRICAL-PROPERTIES; THICKNESS; FATIGUE; DEPENDENCE; DEPOSITION; LAYERS;

D O I：

10.1063/1.4801517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization switching and energy storage properties of highly (100) oriented antiferroelectric (AFE) (Pb,La)(Zr,Ti)O-3 thin films (<= 250 nm) deposited via a sol-gel process with both LaNiO3 and Pt top electrodes were investigated. By using LaNiO3 top electrodes, the energy density as well as energy efficiency can be enhanced by 4.6 J/cm(3) and 11%, respectively. Furthermore, the films with LaNiO3 top electrodes are more capable of providing high energy density over a wide temperature regime above room temperature compared to Pt. This work clearly highlights that oxide top electrodes can greatly improve the energy storage performance of antiferroelectric thin film capacitors. (C) 2013 AIP Publishing LLC.

引用

页数：4

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