A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

被引：132

作者：

Camarchia, Vittorio ^{[1
]}

Quaglia, Roberto ^{[2
]}

Piacibello, Anna ^{[1
,3
]}

Nguyen, Duy P. ^{[4
]}

Wang, Hua ^{[5
]}

Pham, Anh-Vu ^{[6
]}

机构：

[1] Politecn Torino, Dept Elect & Telecommun, I-10129 Turin, Italy

[2] Cardiff Univ, Ctr High Frequency Engn, Cardiff CF24 3AA, Wales

[3] Politecn Torino, Microwave Engn Ctr Space Applicat, I-10129 Turin, Italy

[4] MACOM Technol Solut, Santa Clara, CA 95050 USA

[5] Georgia Inst Technol, Atlanta, GA 30308 USA

[6] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2020年 / 68卷 / 07期

关键词：

Transistors; Gallium arsenide; Gallium nitride; Logic gates; Substrates; Broadband communication; Silicon; Broadband; millimeter wave (mm-wave); power amplifiers (PAs); 5G WIRELESS NETWORKS; HIGH-OUTPUT-POWER; W-BAND AMPLIFIER; BROAD-BAND; HIGH-EFFICIENCY; DISTRIBUTED-AMPLIFIER; DOHERTY AMPLIFIER; 28; GHZ; GAIN; COMPACT;

D O I：

10.1109/TMTT.2020.2989792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.

引用

页码：2957 / 2983

页数：27

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