Simulation of single-mode high-power semiconductor lasers

被引：11
|
作者：
Wenzel, H [1 ]
Erbert, G [1 ]
机构：
[1] FREDINAND BRAUN INST HOCHSTFREQUENZTECHN,D-12489 BERLIN,GERMANY
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV | 1996年 / 2693卷
关键词：
simulation; semiconductor transport equations; high-power lasers; spatial holeburning; carrier leakage;
D O I：
10.1117/12.238977
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：418 / 429
页数：12
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