Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

被引：25
作者：
Ooi, BS
Hamilton, CJ
McIlvaney, K
Bryce, AC
DelaRue, RM
Marsh, JH
Roberts, JS
机构：
[1] UNIV GLASGOW,DEPT ELECT & ELECT ENGN,GLASGOW G12 8QQ,LANARK,SCOTLAND
[2] UNIV SHEFFIELD,DEPT ELECT & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
gallium arsenide; integrated optoelectronics; laser materials-processing applications; laser radiation effects; quantum-well intermixing; quantum wells; semiconductor lasers;
D O I：
10.1109/68.588128
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures, The process requires neither ion implantation nor the deposition of dielectric caps, Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples, Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.
引用
收藏
页码：587 / 589
页数：3
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