Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications

被引：13

作者：

Briot, O ^{[1
]}

Maleyre, B ^{[1
]}

Ruffenach, S ^{[1
]}

Pinquier, C ^{[1
]}

Demangeot, F ^{[1
]}

Frandon, J ^{[1
]}

机构：

[1] Univ Montpellier 2, GES, CNRS, UMR5650, F-34095 Montpellier 5, France

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303523

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self ordered InN dots are grown by Metal Organic Vapor Phase Epitaxy onto GaN, with very low surface densities. Such nano-objects may be employed in the realization of single photon emitters, for quantum cryptography applications. The growth parameters, like growth temperature, V/III molar ratio and deposition time are investigated. First "large" dots are grown, in order to easily assess the material quality, and are studied both by X-ray diffraction and Raman spectroscopy. After optimising the growth conditions, we decrease the deposition time, in order to obtain nanometer size structures. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2851 / 2854

页数：4

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