Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

被引:12
作者
Yoshida, Kyohei [1 ]
Sonobe, Taro [2 ]
Zen, Heishun [3 ]
Hachiya, Kan [1 ]
Okumura, Kensuke [1 ]
Mishima, Kenta [1 ]
Inukai, Motoharu [1 ]
Negm, Hani [3 ]
Torgasin, Konstantin [1 ]
Omer, Mohamed [1 ]
Kii, Toshiteru [3 ]
Masuda, Kai [3 ]
Ohgaki, Hideaki [3 ]
机构
[1] Kyoto Univ, Grad Sch Energy Sci, Sakyo Ku, Kyoto 6068501, Japan
[2] Kyoto Univ, Res Adm Off, Sakyo Ku, Kyoto 6068501, Japan
[3] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
关键词
COHERENT OPTICAL PHONONS; 2ND-HARMONIC GENERATION;
D O I
10.1063/1.4827253
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 mu m). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:4
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