Effect of molecular weight distribution on e-beam exposure properties of polystyrene

被引:22
作者
Dey, Ripon Kumar [1 ]
Cui, Bo
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
关键词
NEGATIVE ELECTRON RESISTS; LITHOGRAPHY; RESOLUTION;
D O I
10.1088/0957-4484/24/24/245302
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polystyrene is a negative electron beam resist whose exposure properties can be tuned simply by using different molecular weights (Mw). Most previous studies have used monodisperse polystyrene with a polydispersity index (PDI) of less than 1.1 in order to avoid any uncertainties. Here we show that despite the fact that polystyrene's sensitivity is inversely proportional to its Mw, no noticeable effect of very broad molecular weight distribution on sensitivity, contrast and achievable resolution is observed. It is thus unnecessary to use the costly monodisperse polystyrene for electron beam lithography. Since the polydispersity is unknown for general purpose polystyrene, we simulated a high PDI polystyrene by mixing in a 1: 1 weight ratio two polystyrene samples with Mw of 170 and 900 kg mol(-1) for the high Mw range, and 2.5 and 13 kg mol(-1) for the low Mw range. The exposure property of the mixture resembles that of a monodisperse polystyrene with similar number averaged molecular weight (Mn) over bar, which indicates that it is (Mn) over bar rather than (Mw) over bar (weight averaged molecular weight) that dominates the exposure properties of polystyrene resist. This also implies that polystyrene of a certain molecular weight can be simulated by a mixture of two polystyrenes having different molecular weights.
引用
收藏
页数:5
相关论文
共 27 条
  • [1] GEL FORMATION IN NEGATIVE ELECTRON RESISTS
    ATODA, N
    KAWAKATSU, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1519 - 1524
  • [2] 6 nm half-pitch lines and 0.04 μm2 static random access memory patterns by nanoimprint lithography
    Austin, MD
    Zhang, W
    Ge, HX
    Wasserman, D
    Lyon, SA
    Chou, SY
    [J]. NANOTECHNOLOGY, 2005, 16 (08) : 1058 - 1061
  • [3] Comparison of high resolution negative electron beam resists
    Bilenberg, B.
    Scholer, M.
    Shi, P.
    Schmidt, M. S.
    Boggild, P.
    Fink, M.
    Schuster, C.
    Reuther, F.
    Gruetzner, C.
    Kristensen, A.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 1776 - 1779
  • [4] Effects of polydispersity index and molecular weight on crystallization kinetics of syndiotactic polystyrene (sPS)
    Chen, Chen-Ming
    Hsieh, Tsung-Eong
    Ju, Ming-Yih
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 480 (02) : 658 - 661
  • [5] Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist
    Clark, Nathaniel
    Vanderslice, Amy
    Grove, Robert, III
    Krchnavek, Robert R.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3073 - 3076
  • [6] Con C, 2012, EIPBN MAY
  • [7] High molecular weight polystyrene as very sensitive electron beam resist
    Con, Celal
    Dey, Ripon
    Ferguson, Mark
    Zhang, Jian
    Mansour, Raafat
    Yavuz, Mustafa
    Cui, Bo
    [J]. MICROELECTRONIC ENGINEERING, 2012, 98 : 254 - 257
  • [8] ELECTRON-BEAM LITHOGRAPHY OF CHLORINATED POLYSTYRENES WITH NARROW MOLECULAR-WEIGHT DISTRIBUTIONS
    FEIT, ED
    STILLWAGON, LE
    [J]. POLYMER ENGINEERING AND SCIENCE, 1980, 20 (16) : 1058 - 1063
  • [9] Optical properties of thick metal nanohole arrays fabricated by electron-beam and nanosphere lithography
    Hajiaboli, Ahmad Reza
    Cui, Bo
    Kahrizi, M.
    Truong, Vo-Van
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05): : 976 - 979
  • [10] HIGH-RESOLUTION ELECTRON-BEAM NEGATIVE RESIST WITH VERY NARROW MOLECULAR-WEIGHT DISTRIBUTIONS
    ITAYA, K
    SHIBAYAMA, K
    FUJIMOTO, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 663 - 665